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strong ir fet? irf40h210 1 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 hexfet ? power mosfet application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant ? fig 1. typical on-resistance vs. gate voltage base part number package type standard pack orderable part number form quantity irf40h210 pqfn 5mm x 6mm tape and reel 4000 irf40h210 ? pqfn 5 x 6 mm fig 2. maximum drain current vs. case temperature v dss 40v r ds(on) typ. 1.4m ?? max 1.7m ?? i d (silicon limited) 201a ? i d (package limited) 100a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 150 175 200 225 i d , d r a i n c u r r e n t ( a ) limited by package
? irf40h210 2 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 absolute maximum rating symbol parameter max. units i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 201? a i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 127 ? i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v(wire bond limited) 100 i dm pulsed drain current ?? 400* p d @t c = 25c maximum power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 ? c ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 42 ??? mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? 1.4 1.7 v gs = 10v, i d = 100a ? ??? 2.3 ??? v gs = 6.0v, i d = 50a ? v gs(th) gate threshold voltage 2.2 ??? 3.7 v v ds = v gs , i d = 150a i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 40 v, v gs = 0v ??? ??? 150 v ds = 40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.6 ??? ?? m ??? notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 100a by source bonding technology. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.030mh, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1117a/s, v dd ? v (br)dss , t j ?? 150c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? when mounted on 1 inch square pcb (fr- 4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 27a, v gs =10v. * pulse drain current is limited by source bonding technology. avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 149 mj e as (thermally limited) single pulse avalanche energy ?? 370 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 1.0 r ? jc (top) junction-to-case ? ??? 18 c/w r ? ja junction-to-ambient ? ??? 33 ? r ? ja (<10s) junction-to-ambient ? ??? 20 ?
? irf40h210 3 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 113 ??? ??? s v ds = 10v, i d = 100a q g total gate charge ??? 101 152 i d = 100a q gs gate-to-source charge ??? 30 ??? v ds = 20v q gd gate-to-drain charge ??? 31 ??? v gs = 10v q sync total gate charge sync. (qg ? qgd) ??? 70 ??? t d(on) turn-on delay time ??? 9.2 ??? ns v dd = 20v t r rise time ??? 25 ??? i d = 30a t d(off) turn-off delay time ??? 65 ??? r g = 2.7 ?? t f fall time ??? 34 ??? v gs = 10v ? c iss input capacitance ??? 5406 ??? pf ? v gs = 0v c oss output capacitance ??? 805 ??? v ds = 25v c rss reverse transfer capacitance ??? 518 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 962 ??? v gs = 0v, vds = 0v to 32v ? c oss eff.(tr) output capacitance (time related) ??? 1179 ??? v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 400* integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? 0.8 1.2 v t j = 25c,i s = 100a,v gs = 0v ? dv/dt peak diode recovery dv/dt ?? ??? 6.2 ??? v/ns t j = 150c,i s = 100a,v ds = 40v t rr reverse recovery time ??? 21 ??? ns t j = 25c ??? 22 ??? t j = 125c q rr reverse recovery charge ??? 32 ??? nc t j = 25c ?? ??? 38 ??? t j = 125c ? i rrm reverse recovery current ??? 1.0 ??? a t j = 25c ? nc ? d s g v r = 34v, i f = 100a di/dt = 100a/s ?
? irf40h210 4 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 4.25v ? 60s pulse width tj = 25c 4.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 4.25v ? 60s pulse width tj = 150c 4.25v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20406080100120140 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v vds= 20v i d = 100a fig 8. typical gate charge vs. gate-to-source voltage
? irf40h210 5 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 fig 10. maximum safe operating area fig 13. typical on-resista nce vs. drain current fig 12. typical c oss stored energy fig 11. drain-to-source breakdown voltage 0.1 0.4 0.7 1.0 1.3 1.6 1.9 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 10000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 37 39 41 43 45 47 49 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 9. typical source-drain diode forward voltage 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 e n e r g y ( j ) 0 50 100 150 200 i d , drain current (a) 0 2 4 6 8 10 12 14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.0v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.1 1 10 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package
? irf40h210 6 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a fig 15. avalanche current vs. pulse width
? irf40h210 7 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 17. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 150a id = 250a id = 1.0ma id = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 250 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c
? irf40h210 8 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irf40h210 9 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? irf40h210 10 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 pqfn tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description type package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? irf40h210 11 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes industrial (per jedec jesd47f ?? guidelines) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release.

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